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Proceedings Paper

Approach to analyze decomposition impact for photomask fabrication
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Paper Abstract

Double patterning technology (DPT) is one of candidates to achieve 45nm or 32nm half-pitch and is getting popular as ITRS2006update(1). ITRS2006update specifies the tight specification of image-placement and the difference of CD mean-to target of two masks, and they are also evaluated and reported(2). From photomask fabrication viewpoint or just even employing actual wafer exposure experiment, it's much difficult to evaluate actual impact on wafer using DPT. Because what observed on wafer is mixture of not only photomask-property but also exposure's one and new topic of hard-mask process'. In this paper, one evaluation procedure will be proposed using actual two photomasks and the DPT impact on wafer just from two photomasks will be demonstrated. Then the approach of wafer image composing procedure with photomask-SEM image, photomask measurement and exposure simulation will be discussed

Paper Details

Date Published: 15 May 2007
PDF: 9 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660733 (15 May 2007); doi: 10.1117/12.729022
Show Author Affiliations
Nobuhito Toyama, Dai Nippon Printing Co., Ltd. (Japan)
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Yuichi Inazuki, Dai Nippon Printing Co., Ltd. (Japan)
Takanori Sutou, Dai Nippon Printing Co., Ltd. (Japan)
Takaharu Nagai, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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