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Proceedings Paper

Functionality and performance improvements with field-based OPC
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Paper Abstract

The upcoming 45nm and 32nm device generations will continue the familiar industry lithography trends of decreased production K1 factor, reduced focus error tolerances and increased pattern density. As previous experience has shown, small changes in the values of lithographic K1, focus tolerance and pattern density for the process-design space can lead to large required changes in OPC and RET solutions. Therefore, significant improvements in utility and speed are needed for these new device generations. In this paper we highlight significant new functionality and performance capabilities using existing Field-based OPC and RET methods. The use of dense grid calculations in Field-based methods is shown to provide a software platform for robust and fast implementation of new model-based RET techniques such as model-based assist feature placement and tuning. We present the performance and capability increases for model-based RET methods. Additionally, we have studied and present the performance of production 45nm generation field-based OPC and RET software across several different multiple-purpose hardware platforms. Significant improvements in runtime (for approximately the same hardware cost) are observed with new general purpose hardware platforms and with software optimization for this hardware.

Paper Details

Date Published: 15 May 2007
PDF: 10 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072T (15 May 2007); doi: 10.1117/12.729012
Show Author Affiliations
Ben Painter, Synopsys, Inc. (United States)
Kunal Taravade, Synopsys, Inc. (United States)
Levi Barnes, Synopsys, Inc. (United States)
Robert Lugg, Synopsys, Inc. (United States)
Jeff Mayhew, Synopsys, Inc. (United States)
Glenn Newell, Synopsys, Inc. (United States)
Kevin Lucas, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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