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Proceedings Paper

Evaluation of litho printability of DRAM contact hole patterns with various programmed defects
Author(s): KangJoon Seo; SangIee Lee; HyunYoung Kim; DaeHo Hwang; Sangpyo Kim; Goomin Jeong; Oscar Han; Chunlin Chen; David Yee; EunJi Kim; KiHun Park; NamWook Kim; Sunny Choi; David Kim; Shrinkant Lohokare
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Paper Abstract

As the photomask design rules continue to shrink towards 45nm and below, the defect classification criteria is becoming more challenging to be set accurately. Pattern fidelity issues and masks defects that were once considered insignificant or merely nuisances are now yield-limiting. On the other hand, there are still cases of small defects captured during reticle inspection but will not print on the wafer. In addition, in a production setting environment it is critical to ascertain quickly and efficiently the true lithographic effect of reticle defects in order to avoid yield and cycle time impacts. As a starting point, it is best to inspect the reticle at the highest sensitivity to find all defects and anomalies. From there, fast and efficient means to sort and prioritize defects are necessary for inspection operators' and engineers' convenience. Then, it is critical to model all the defects accurately for their lithographic impact. Finally, an accurate lithography-based set of reticle defect disposition criteria can be developed for the manufacturing process flow. The focus of this study is on contact or hole patterns since the issues regarding capture of defects on such patterns are typically more complex than the ones on line and space patterns. The intent is to assess and devise defect disposition criteria for contact hole layers utilizing KLA-Tencor's 5X6 DUV inspection system with both standard die-to-die and Litho2 algorithms and the Automated Mask Defect Disposition (AMDD) system. AMDD lithographic printability results will be compared to AIMS results and printed results on wafer.

Paper Details

Date Published: 15 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072D (15 May 2007); doi: 10.1117/12.728996
Show Author Affiliations
KangJoon Seo, Hynix Semiconductor Inc. (South Korea)
SangIee Lee, Hynix Semiconductor Inc. (South Korea)
HyunYoung Kim, Hynix Semiconductor Inc. (South Korea)
DaeHo Hwang, Hynix Semiconductor Inc. (South Korea)
Sangpyo Kim, Hynix Semiconductor Inc. (South Korea)
Goomin Jeong, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)
Chunlin Chen, KLA-Tencor Corp. (United States)
David Yee, KLA-Tencor Corp. (United States)
EunJi Kim, KLA-Tencor Corp. (United States)
KiHun Park, KLA-Tencor Corp. (United States)
NamWook Kim, KLA-Tencor Corp. (United States)
Sunny Choi, KLA-Tencor Corp. (United States)
David Kim, KLA-Tencor Corp. (United States)
Shrinkant Lohokare, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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