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Proceedings Paper

Fundamental limit of ebeam lithography
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Paper Abstract

Particle beams with collimated discrete charged carriers such as electrons have been employed to lithographically transfer design patterns onto the photoresist for fabrication of devices, such as photomasks. In this paper, we use a single standard deviation σ of total blur based on Gaussian convolution kernel to address the limit of ebeam lithography, where the total blur is constituted of several mechanisms, including space charge effect within the ebeam, shot noise, resist diffusion, and photoacid fluctuation, etc. Based on the Gaussian blur imaging formalism including both electron forward scattering and backward scattering, we derive a fundamental principle based analysis to address the patterning resolution limit, local pattern density (LPD) dependent critical dimension (CD) proximity bias, CD non-linearity, image edge-slope, 2D corner pull back and 2D touch corner structures. Assuming a minimum normalized image log slope of NILS >= 1 across all LPD is required for high volume manufacturability, the requirement of maximum total blur can be derived as σ≤CD/2.4 for a given exposed feature size targeted to pattern. The objective of this paper is to establish a predictive model with simplicity for fundamental limit of ebeam lithography, and accordingly to define the requirement of blur reduction for meeting technology roadmap spec. The key emphasis of this paper is to highlight that mask patterning capability is becoming resolution limited with equipment and material available today. This is an inflection point! An integrated plan for total blur reduction is urgently needed for ebeam lithography to continue enabling technologies moving beyond 45nm and 32nm nodes.

Paper Details

Date Published: 14 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660724 (14 May 2007); doi: 10.1117/12.728987
Show Author Affiliations
Wen-Hao Cheng, Intel Corp. (United States)
Jeff Farnsworth, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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