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Proceedings Paper

Study of heating effect on CAR in electron-beam mask writing
Author(s): Takashi Kamikubo; Makoto Hiramoto; Jun Yashima; Masazumi Takahashi; Rieko Nishimura; Takehiko Katsumata; Hirohito Anze; Hitoshi Sunaoshi; Shuichi Tamamushi; Munehiro Ogasawara
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Paper Abstract

Heating effect was evaluated for EBM-6000 which is operated at high current density of 70A/cm2 and acceleration voltage of 50kV. FEP171 as widely used for current productions and lower sensitivity resists are tested. Lower sensitivity resist is one of key items to achieve highly accurate Local critical dimension uniformity (LCDU) because of shot noise reduction. CD variations in experiment are compared with simulated temperature changes induced by heating effect. Then, the ratio, ΔCD/ΔT, is found mostly constant for every resist, 0.1 nm/C°. Writing conditions are estimated to meet CDU spec of hp45 generation for a worst case pattern, i.e. 100% density pattern. For FEP171, the maximum shot size of 0.85 μm shot size at 2pass writing mode is sufficient. It should be reduced to 0.5 μm at 2pass writing mode for every lower sensitivity resist. When 4pass writing mode is used, the maximum shot size of 0.85 μm is available. Writing conditions and writing time for realistic patterns are also discussed.

Paper Details

Date Published: 14 May 2007
PDF: 9 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660723 (14 May 2007); doi: 10.1117/12.728986
Show Author Affiliations
Takashi Kamikubo, NuFlare Technology Inc. (Japan)
Makoto Hiramoto, NuFlare Technology Inc. (Japan)
Jun Yashima, NuFlare Technology Inc. (Japan)
Masazumi Takahashi, NuFlare Technology Inc. (Japan)
Rieko Nishimura, NuFlare Technology Inc. (Japan)
Takehiko Katsumata, NuFlare Technology Inc. (Japan)
Hirohito Anze, NuFlare Technology Inc. (Japan)
Hitoshi Sunaoshi, NuFlare Technology Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology Inc. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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