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Proceedings Paper

A study of EB pattern writer system design for 22-nm node and beyond
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Paper Abstract

The optical lithography still remains to be the mainstream coupled with RETs (resolution enhancement techniques) because of the various and serious difficulties other NGL candidates (Electron beam direct writing, EUV and etc.) are facing now. Development of OPC have made pattern data complexity large so that increasing rate of pattern data volume is higher than the number of transistors in a chip. We studied key issues of development of mask writer especially for throughput.

Paper Details

Date Published: 15 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660722 (15 May 2007); doi: 10.1117/12.728985
Show Author Affiliations
Shuichi Tamamushi, NuFlare Technology Inc. (Japan)
Hideaki Hamada, NuFlare Technology Inc. (Japan)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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