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Proceedings Paper

Study of mask structure for 45-nm node based on manufacturability and lithographic performance
Author(s): Jong Gul Doh; Cheol Hong Park; Yong Seung Moon; Bo Hye Kim; Sung Won Kwon; Sun Young Choi; Sung Hyuck Kim; Seong Yoon Kim; Byung Gook Kim; Sang Gyun Woo; Han Ku Cho
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Paper Abstract

As design rule has decreased, blank type or photo resist, which meets requirement of resolution, has been developed. HT PSM mainly used to pattern small line width has no longer advantages for immersion wafer process. It makes binary mask to be gradually used for mask production. Comparing to HT PSM, the production of binary mask has a relatively simple process. However, we may consider optical density, PR or Cr thickness, etch selectivity, and ID bias related to linearity for applying binary mask below sub-45nm. In this paper, we will compare and analyze difference between actual manufacture and theoretical optic level such as optical density. Finally, based on our experiment, optimal combination of photoresists and blanks which can realize sub-45nm node will be discussed.

Paper Details

Date Published: 14 May 2007
PDF: 7 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071U (14 May 2007); doi: 10.1117/12.728977
Show Author Affiliations
Jong Gul Doh, Samsung Electronics Co., Ltd. (South Korea)
Cheol Hong Park, Samsung Electronics Co., Ltd. (South Korea)
Yong Seung Moon, Samsung Electronics Co., Ltd. (South Korea)
Bo Hye Kim, Samsung Electronics Co., Ltd. (South Korea)
Sung Won Kwon, Samsung Electronics Co., Ltd. (South Korea)
Sun Young Choi, Samsung Electronics Co., Ltd. (South Korea)
Sung Hyuck Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong Yoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Byung Gook Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han Ku Cho, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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