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Proceedings Paper

Evaluation of lithography simulation model accuracy for hotspot-based mask quality assurance
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Paper Abstract

Mask topography has effects on important components of optical image formation at 45nm node and beyond, and therefore, the lithography simulation model required for hotspot-based mask quality assurance has to incorporate mask topography effects. Since calculation of mask topography effects involves physical phenomena different from those encountered in resist processes, we propose the concept of the mask & resist dual fitting method that splits the general experimental model into the experimental resist model and the experimental mask model. To realize mask & resist dual fitting, we have developed an experimental mask model, namely, the mask topography approximate model. The mask & resist dual fitting method can improve model fitting accuracy and improve prediction accuracy at hotspots.

Paper Details

Date Published: 14 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071E (14 May 2007); doi: 10.1117/12.728962
Show Author Affiliations
Masaki Satake, Toshiba Corp. (Japan)
Mitsuyo Kariya, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Kohji Hashimoto, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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