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Proceedings Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node
Author(s): Jean-Christophe Urbani; Jean-Damien Chapon; Jérôme Belledent; Amandine Borjon; Christophe Couderc; Jean-Luc Di-Maria; Vincent Farys; Franck Foussadier; Christian Gardin; Gurwan Kerrien; Laurent LeCam; Catherine Martinelli; Patrick Montgomery; Nicolo Morgana; Jonathan Planchot; Frédéric Robert; Yves Rody; Mazen Saied; Frank Sundermann; Yorick Trouiller; Florent Vautrin; Bill Wilkinson; Emek Yesilada
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Paper Abstract

Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45-nm node where most of the process optimization is done for minimum pitch dense lines. Similar to the use of scattering-bars to assist isolated lines structures, we can use inverse Sub Resolution Assist Features (SRAF) to assist the patterning of isolated trenches structures. Full characterization studies on the C45 Active layer demonstrate the benefits and potential issues of this technique: Screen Inverse SRAF parameters (size, distance to main feature) utilizing optical simulation; Verify simulation predictions and ensure sufficient improvement in Depth of Focus and Exposure latitude with silicon process window analysis; Define Inverse SRAF OPC generation script parameters and validate, with accurate on silicon, measurement characterization of specific test patterns; Maskshop manufacturability through CD measurements and inspection capability. Finally, initial silicon results from a 45nm mask are given with suggestions for additional optimization of inverse SRAF for trenches.

Paper Details

Date Published: 14 May 2007
PDF: 8 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071C (14 May 2007); doi: 10.1117/12.728960
Show Author Affiliations
Jean-Christophe Urbani, STMicroelectronics (France)
Jean-Damien Chapon, STMicroelectronics (France)
Jérôme Belledent, NXP Semiconductors (France)
Amandine Borjon, NXP Semiconductors (France)
Christophe Couderc, NXP Semiconductors (France)
Jean-Luc Di-Maria, STMicroelectronics (France)
Vincent Farys, STMicroelectronics (France)
Franck Foussadier, STMicroelectronics (France)
Christian Gardin, Freescale Semiconductor, Inc. (France)
Gurwan Kerrien, STMicroelectronics (France)
Laurent LeCam, NXP Semiconductors (France)
Catherine Martinelli, STMicroelectronics (France)
Patrick Montgomery, Freescale Semiconductor, Inc. (France)
Nicolo Morgana, Freescale Semiconductor, Inc. (France)
Jonathan Planchot, STMicroelectronics (France)
Frédéric Robert, STMicroelectronics (France)
Yves Rody, NXP Semiconductors (France)
Mazen Saied, Freescale Semiconductor, Inc. (France)
Frank Sundermann, STMicroelectronics (France)
Yorick Trouiller, CEA-LETI (France)
Florent Vautrin, STMicroelectronics (France)
Bill Wilkinson, Freescale Semiconductor, Inc. (France)
Emek Yesilada, Freescale Semiconductor, Inc. (France)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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