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Proceedings Paper

EUV-mask pattern inspection using current DUV reticle inspection tool
Author(s): Tsukasa Abe; Akiko Fujii; Shiho Sasaki; Hiroshi Mohri; Hidemichi Imai; Hironobu Takaya; Yasushi Sato; Naoya Hayashi; Yumiko Maenaka
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Paper Abstract

EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch pattern, and between die to die mode and die to database mode. Inspection sensitivity difference was not observed between before buffer etch pattern and after buffer etch pattern. In addition to defect inspection, wafer print simulation of program defect was investigated. Simulation results were compared to inspection result. We confirmed current DUV reticle inspection tool has potential for EUV mask defect inspection.

Paper Details

Date Published: 11 May 2007
PDF: 7 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070L (11 May 2007); doi: 10.1117/12.728935
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Akiko Fujii, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Hidemichi Imai, Dai Nippon Printing Co., Ltd. (Japan)
Hironobu Takaya, Dai Nippon Printing Co., Ltd. (Japan)
Yasushi Sato, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Yumiko Maenaka, KLA-Tencor Japan Ltd. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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