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Proceedings Paper

Optimization of electrostatic chuck for mask-blank flatness control in extreme ultra-violet lithography
Author(s): Emily Y. Shu
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Paper Abstract

Overlay requirements of Extreme Ultra-violet Lithography (EUVL) dictate reticle flatness errors of 50nm or less. During the early phase of EUVL development, it was decided that an electrostatic chuck was required to flatten EUVL masks to these specifications. However current experience and test data have demonstrated that it will be very difficult to reach the desired mask flatness goal without a thorough understanding and advanced control of the echucking process. The results of a parametric model study are reported in this paper. In this study we calculated the chucking force dependence of activating voltage, e-chuck geometry, film material, and pin design, and then proposed an optimized chuck design. We have also engaged in a material study for the mask backside coating for the purpose of reducing flatness errors and minimizing backside particle generation. We have also designed and built an automated, vacuum based, interferometric metrology tool to enable e-chucking experimentation. An early status report of this tool will be included in this paper.

Paper Details

Date Published: 11 May 2007
PDF: 12 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070J (11 May 2007); doi: 10.1117/12.728933
Show Author Affiliations
Emily Y. Shu, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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