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Proceedings Paper

Qualification of design-optimized multizone hotplate for 45-nm node mask making
Author(s): Lothar Berger; Peter Dress; Shun-Ho Yang; Chien-Hsien Kuo
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Paper Abstract

The demand for ever smaller features in integrated circuit manufacturing continues to put more stringent requirements on photomask fabrication, particularly with respect to critical dimension (CD) control. A high resolution process for making attenuated-phase-shift masks (attPSM) for the 45nm node with a negative-tone chemically amplified resist (nCAR), utilizing a new precision bake system, was evaluated. This process showed a significant performance improvement in critical dimension uniformity (CDU), respective to an established process based on an APB5500 system. A CD-uniformity improvement from 2.1nm CD 3σ to 1.3nm CD 3σ (40%) was achieved on a demanding layout. The new precision bake system utilizes an improved multi-zone hotplate design and control algorithm, which enables highly precise temperature controllability, facilitating a superior temperature ramp-up performance, as well as significantly improved temperature setpoint stability, as has been measured with a 25-point sensor mask for a 95°C bake process. The new precision bake system shall now be introduced to the market within the HamaTech MaskTrack series.

Paper Details

Date Published: 11 May 2007
PDF: 11 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070D (11 May 2007); doi: 10.1117/12.728926
Show Author Affiliations
Lothar Berger, Fraunhofer Ctr. for Nanoelectronic Technologies (Germany)
Peter Dress, HamaTech APE GmbH & Co. KG (Germany)
Shun-Ho Yang, HamaTech APE GmbH & Co. KG, Taiwan Branch Office (Taiwan)
Chien-Hsien Kuo, HamaTech APE GmbH & Co. KG, Taiwan Branch Office (Taiwan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

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