Share Email Print
cover

Proceedings Paper

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control
Author(s): Yosuke Kojima; Masanori Shirasaki; Kazuaki Chiba; Tsuyoshi Tanaka; Yukio Inazuki; Hiroki Yoshikawa; Satoshi Okazaki; Kazuya Iwase; Kiichi Ishikawa; Ken Ozawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF), and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection film and shielding film composed of MoSi are deposited under the Cr film. The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all items. The mask CD performance shows significant improvement. The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0 CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM for 45 nm node and beyond.

Paper Details

Date Published: 11 May 2007
PDF: 11 pages
Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070C (11 May 2007); doi: 10.1117/12.728925
Show Author Affiliations
Yosuke Kojima, Toppan Printing Co., Ltd. (Japan)
Masanori Shirasaki, Toppan Printing Co., Ltd. (Japan)
Kazuaki Chiba, Toppan Printing Co., Ltd. (Japan)
Tsuyoshi Tanaka, Toppan Printing Co., Ltd. (Japan)
Yukio Inazuki, Shin-Etsu Chemical Co., Ltd. (Japan)
Hiroki Yoshikawa, Shin-Etsu Chemical Co., Ltd. (Japan)
Satoshi Okazaki, Shin-Etsu Chemical Co., Ltd. (Japan)
Kazuya Iwase, Sony Corp. (Japan)
Kiichi Ishikawa, Sony Corp. (Japan)
Ken Ozawa, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 6607:
Photomask and Next-Generation Lithography Mask Technology XIV
Hidehiro Watanabe, Editor(s)

© SPIE. Terms of Use
Back to Top