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Proceedings Paper

An approach to validation of rigorous modeling in optical CD microscopy by comparison of measurement results with independent methods
Author(s): B. Bodermann; H. Bosse
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Paper Abstract

Optical measurement methods like high resolution microscopy and scatterometry are widely used in photomask and semiconductor metrology. One of the most important measurement tasks is the characterization of line features for CD or linewidth or more general 3D line shape characteristics. For proper simulation of microscopic imaging rigorous diffraction models were applied on isolated and dense as well as clear and opaque photomask line features. The features were also different with respect to edge angle and edge shape as well as optical properties of photomask absorber structures. We report on the results on special test masks with intended larger edge angle variations as well as on high quality photomask line features on CD standards which are used for the 65 nm semiconductor technology node. In order to be able to compare and validate the uncertainty calculations of these results, systematic comparisons with other independently traceable measurement methods on the same features have been performed. For this cross-calibration analysis low voltage SEM as well as additional AFM measurements were used.

Paper Details

Date Published: 18 June 2007
PDF: 10 pages
Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 66170Y (18 June 2007); doi: 10.1117/12.728896
Show Author Affiliations
B. Bodermann, Physikalisch-Technische Bundesanstalt (Germany)
H. Bosse, Physikalisch-Technische Bundesanstalt (Germany)


Published in SPIE Proceedings Vol. 6617:
Modeling Aspects in Optical Metrology
Harald Bosse; Bernd Bodermann; Richard M. Silver, Editor(s)

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