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Proceedings Paper

A 130-nm CMOS single-photon avalanche diode
Author(s): Cristiano Niclass; Marek Gersbach; Robert Henderson; Lindsay Grant; Edoardo Charbon
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Paper Abstract

The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.

Paper Details

Date Published: 12 October 2007
PDF: 9 pages
Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 676606 (12 October 2007); doi: 10.1117/12.728878
Show Author Affiliations
Cristiano Niclass, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Marek Gersbach, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Robert Henderson, Univ. of Edinburgh (United Kingdom)
Lindsay Grant, ST Microelectronics (United Kingdom)
Edoardo Charbon, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 6766:
Optoelectronic Devices: Physics, Fabrication, and Application IV
Joachim Piprek; Jian J. Wang, Editor(s)

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