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Proceedings Paper

Fast and power-efficient infrared single-photon upconversion using hot-carrier luminescence
Author(s): Hod Finkelstein; Kai Zhao; Matthias Gross; Yu-Hwa Lo; Sadik Esener
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Paper Abstract

We analyze a new method for single-photon frequency upconversion. This technique uses a byproduct of the avalanche process - electroluminescence resulting from hot-carrier recombination - as a means of upconversion. Because the spectrum of the emitted photons peaks near the bandgap of the multiplying material and has a significant tail at higher energies, it is possible to generate secondary photons at significantly higher energies than the primary absorbed photon. The secondary photons can then be detected by a coupled CMOS silicon single-photon avalanche diode (SPAD), where the information can also be processes. This upconversion scheme does not require any electrical connections between the detecting device and the silicon SPAD, so glass-to-glass bonding can be used, resulting in inexpensive, high-density arrays of detectors. We calculate the internal and system upconversion efficiencies, and show that the proposed scheme is feasible and highly efficient for application such as quantum key distribution and near infrared low-light-level imaging.

Paper Details

Date Published: 25 September 2007
PDF: 10 pages
Proc. SPIE 6710, Quantum Communications and Quantum Imaging V, 671014 (25 September 2007); doi: 10.1117/12.728822
Show Author Affiliations
Hod Finkelstein, Univ. of California, San Diego (United States)
Kai Zhao, Univ. of California, San Diego (United States)
Matthias Gross, Univ. of California, San Diego (United States)
Yu-Hwa Lo, Univ. of California, San Diego (United States)
Sadik Esener, Univ. of California, San Diego (United States)


Published in SPIE Proceedings Vol. 6710:
Quantum Communications and Quantum Imaging V
Ronald E. Meyers; Yanhua Shih; Keith S. Deacon, Editor(s)

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