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Proceedings Paper

Characterization of vanadium doped ZnO films produced by pulsed laser deposition
Author(s): M. E. Koleva; P. A. Atanasov; J. Perriere; D. Tzankov
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Paper Abstract

The aim of our work was to produce and investigate vanadium doped ZnO thin films with potential application in spintronic technology. Thin films with different concentration of V (2, 3, 5 and 7 at.%) were deposited by using the pulsed laser deposition (PLD) technique. The distribution of vanadium in the films and the variation of its content during laser deposition was determined by Rutherford backscattering spectroscopy (RBS). We also present a comparative study of the structural and electrical properties of 2 at.% V:ZnO films deposited on sapphire substrates with different orientations.

Paper Details

Date Published: 5 March 2007
PDF: 5 pages
Proc. SPIE 6604, 14th International School on Quantum Electronics: Laser Physics and Applications, 660415 (5 March 2007); doi: 10.1117/12.727098
Show Author Affiliations
M. E. Koleva, Institute of Electronics (Bulgaria)
P. A. Atanasov, Institute of Electronics (Bulgaria)
J. Perriere, Institute des Nanosciences de Paris, CNRS, Univ. Paris VI (France)
D. Tzankov, Univ. of Sofia (Bulgaria)

Published in SPIE Proceedings Vol. 6604:
14th International School on Quantum Electronics: Laser Physics and Applications
Peter A. Atanasov; Tanja N. Dreischuh; Sanka V. Gateva; Lubomir M. Kovachev, Editor(s)

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