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Proceedings Paper

Computer simulation of the scaled power bipolar SHF transistor structures
Author(s): V. V. Nelayev; V. A. Efremov; Yu. P. Snitovsky
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Paper Abstract

New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.

Paper Details

Date Published: 10 April 2007
PDF: 4 pages
Proc. SPIE 6597, Nanodesign, Technology, and Computer Simulations, 65971B (10 April 2007); doi: 10.1117/12.726785
Show Author Affiliations
V. V. Nelayev, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
V. A. Efremov, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Yu. P. Snitovsky, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 6597:
Nanodesign, Technology, and Computer Simulations

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