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Proceedings Paper

Pulse LDA-pumped passively Q-switched mode locked Nd:YVO4 laser with a GaAs saturable absorber
Author(s): Xiaojuan Liu; Rulian Fu
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Paper Abstract

A passively Q-switched pulse-LDA(laser-diode-array)-pumped Nd:YVO4 laser using As+ion-implanted GaAs as a saturable absorber is demonstrated. In the Q-switching experiment, the laser produces one Q-switching pulse in every pumping pulse duration and a Q-switching pulse width 7 ns is achieved. When the pumping power is increased a Q-switched mode-locked laser is achieved. Using a 60% initial transmission GaAs wafer, the modulation depth of larger than 95% is obtained. The repetition rate of the mode-locked pulses in the Q-switched envelope is 991MHz. The effects of the pumping pulse energy, pumping pulse width and repetition rate on the characteristics of the Q-switched mode-locked pulses are also investigated respectively. The experimental results are discussed as well in the paper.

Paper Details

Date Published: 5 March 2007
PDF: 7 pages
Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 659517 (5 March 2007); doi: 10.1117/12.726610
Show Author Affiliations
Xiaojuan Liu, Institute of Modern Optics, Nankai Univ. (China)
Rulian Fu, Institute of Modern Optics, Nankai Univ. (China)

Published in SPIE Proceedings Vol. 6595:
Fundamental Problems of Optoelectronics and Microelectronics III
Yuri N. Kulchin; Jinping Ou; Oleg B. Vitrik; Zhi Zhou, Editor(s)

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