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Proceedings Paper

MBE technology of saturable Bragg reflectors for mode locking of solid state lasers
Author(s): K. Kosiel; M. Kosmala; K. Regiński; M. Bugajski
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Paper Abstract

Design and fabrication of saturable Bragg reflectors (SBRs) by molecular beam epitaxy (MBE) is presented. Grown structures consisted of AlAs/GaAs quarter-wave layers with low-temperature InGaAs/GaAs quantum wells (LT QWs) as saturable absorber layers. Special emphasis is put on methodology of wavelength tailoring of distributed Bragg reflectors and on MBE technology of growing the quantum wells with the recombination time of excitons of the order of tens ps. Application of different methods of characterization of LT QWs and SBRs for testing and optimizing the MBE process is discussed.

Paper Details

Date Published: 1 February 2007
PDF: 5 pages
Proc. SPIE 6599, Laser Technology VIII: Progress in Lasers, 659904 (1 February 2007); doi: 10.1117/12.726595
Show Author Affiliations
K. Kosiel, Institute of Electron Technology (Poland)
M. Kosmala, Warsaw Univ. of Technology (Poland)
K. Regiński, Institute of Electron Technology (Poland)
M. Bugajski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 6599:
Laser Technology VIII: Progress in Lasers
Wieslaw Wolinski; Zdzislaw Jankiewicz; Ryszard S. Romaniuk, Editor(s)

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