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Proceedings Paper

Modification of band gap in surface layer in Cd1-xZnxTe by YAG: Nd+3 laser radiation
Author(s): Artur Medvid; Leonid L. Fedorenko; Dmytro V. Korbutjak; Sergiy G. Kryluk; Mikola M. Yusupov; Aleksandr Mychko
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Paper Abstract

A mechanism of formation of graded band-gap based on Thermogradient Effect (TGE) is proposed in Cd1-xZnxTe at irradiation by second harmonic of a Q-switched YAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence (PL) spectra studied at 5 K show that concentration of Zn atoms increases due to aggregation of VCd with Zn after laser irradiation. Formation of a graded band-gap in Cd1-xZnxTe crystal at irradiation by second harmonica of YAG:Nd laser by is shown to be possible.

Paper Details

Date Published: 25 January 2007
PDF: 5 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65961A (25 January 2007); doi: 10.1117/12.726500
Show Author Affiliations
Artur Medvid, Riga Technical Univ. (Latvia)
Leonid L. Fedorenko, Institute of Semiconductor Physics (Ukraine)
Dmytro V. Korbutjak, Institute of Semiconductor Physics (Ukraine)
Sergiy G. Kryluk, Institute of Semiconductor Physics (Ukraine)
Mikola M. Yusupov, Institute of Semiconductor Physics (Ukraine)
Aleksandr Mychko, Riga Technical Univ. (Latvia)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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