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Proceedings Paper

Electric field effect on electrical memory of inhomogeneously strained La0.67Ca0.33MnO3 films
Author(s): Oleg Kiprijanovič; Andžej Lučun; Steponas Ašmontas; Fiodoras Anisimovas; Andrius Maneikis; Bonifacas Vengalis
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Paper Abstract

Reversible resistance change of thin La0.67Ca0.33MnO3 films, grown on cleaved MgO substrates, have been investigated using both dc current and nanosecond electrical pulses of 10 ns and 100 ns in duration. It was found that at T=80 K the series of 10 ns pulses with electric field strength above 20 kV/cm induced a reversible change of the film from low to high resistive state. At the same time, the series of 100 ns pulses transmitted through the sample with increased resistance induced an inverse effect - i.e. transformation of the film to the initial state. It was also obtained that at 130 K (just below Curie temperature Tc) the series of 100 ns electrical pulses induced the resistive transition at lower electric field value (13.7 kV/cm). The obtained results were explained in terms of local film heating and strong electric field effect on narrow conductive constructions during current flow through channels in electrically inhomogeneous media in the vicinity of Tc.

Paper Details

Date Published: 25 January 2007
PDF: 5 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659617 (25 January 2007); doi: 10.1117/12.726494
Show Author Affiliations
Oleg Kiprijanovič, Semiconductor Physics Institute (Lithuania)
Andžej Lučun, Semiconductor Physics Institute (Lithuania)
Steponas Ašmontas, Semiconductor Physics Institute (Lithuania)
Fiodoras Anisimovas, Semiconductor Physics Institute (Lithuania)
Andrius Maneikis, Semiconductor Physics Institute (Lithuania)
Bonifacas Vengalis, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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