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Proceedings Paper

Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films
Author(s): Jaan Aarik; Aarne Kasikov; Ahti Niilisk
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Paper Abstract

Properties of titanium dioxide thin films grown by atomic layer deposition from TiCl4 and H2O on SiO2 substrates were characterized using Raman spectroscopy and spectrophotometry methods. Raman spectroscopy revealed transformation of the film structure from amorphous to anatase, to anatase/rutile mixture and then back to anatase with the increase of deposition temperature from 100 to 680oC. Variations in the growth rate, refractive index and extinction index accompanied these structural changes. Analysis of the transmission curves demonstrated that differently from amorphous films, the crystalline films were optically inhomogeneous in the growth direction.

Paper Details

Date Published: 25 January 2007
PDF: 6 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659616 (25 January 2007); doi: 10.1117/12.726492
Show Author Affiliations
Jaan Aarik, Univ. of Tartu (Estonia)
Aarne Kasikov, Univ. of Tartu (Estonia)
Ahti Niilisk, Univ. of Tartu (Estonia)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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