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Proceedings Paper

Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures
Author(s): Eugenijus Shatkovskis; Antanas Česnys; Jonas Gradauskas; Jolanta Stupakova; Oleg Kiprijanovič
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Paper Abstract

Two-terminal diode-like porous silicon structures have been investigated under the impact of strong electric field. Strong electric field I-V current-voltage characteristics have been measured in pulse regime by applying electric pulses of 15 ns duration, at repetition rate of (100-150) Hz, creating average electric field in the structure up to (103-104) V/cm. Modification of structured state of the structures have been revealed at strong electric field influence, resulting in change and stabilizing of their series resistance.

Paper Details

Date Published: 14 February 2007
PDF: 4 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659615 (14 February 2007); doi: 10.1117/12.726491
Show Author Affiliations
Eugenijus Shatkovskis, Vilnius Gediminas Technical Univ. (Lithuania)
Semiconductor Physics Institute (Lithuania)
Antanas Česnys, Vilnius Gediminas Technical Univ. (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)
Jolanta Stupakova, Vilnius Gediminas Technical Univ. (Lithuania)
Oleg Kiprijanovič, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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