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Proceedings Paper

Phonon sidebands in photoluminescence of beryllium delta-doped GaAs/AlAs multiple quantum wells
Author(s): Jurgis Kundrotas; Aurimas Čerškus; Agnė Johannessen; Steponas Ašmontas; Gintaras Valušis; Matthew P. Halsall; Paul Harrison
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Paper Abstract

We present a study of phonon sidebands in the photoluminescence spectra of Be acceptor-doped GaAs/AlAs multiple quantum wells at liquid nitrogen temperature. Up to two phonon satellites with a separation close to the GaAs longitudinal optical phonon energy are observed in the sideband of the photoluminescence. A theoretical analysis of the satellite-related photoluminescence lineshapes and their energetic position and impurity induced spectra is presented. The results show that the phonon satellites can be attributed to free-electron-Be acceptor transitions involving longitudinal optical phonon of GaAs - the host material of the studied quantum wells.

Paper Details

Date Published: 25 January 2007
PDF: 7 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659612 (25 January 2007); doi: 10.1117/12.726488
Show Author Affiliations
Jurgis Kundrotas, Semiconductor Physics Institute (Lithuania)
Gediminas Technical Univ. of Vilnius (Lithuania)
Aurimas Čerškus, Semiconductor Physics Institute (Lithuania)
Agnė Johannessen, Semiconductor Physics Institute (Lithuania)
Steponas Ašmontas, Semiconductor Physics Institute (Lithuania)
Gintaras Valušis, Semiconductor Physics Institute (Lithuania)
Gediminas Technical Univ. of Vilnius (Lithuania)
Matthew P. Halsall, Univ. of Manchester (United Kingdom)
Paul Harrison, Univ. of Leeds (United Kingdom)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices
Steponas Ašmontas; Jonas Gradauskas, Editor(s)

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