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Proceedings Paper

Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling
Author(s): Arūnas Kadys; Ramūnas Aleksiejūnas; Kęstutis Jarašiūnas; Liudas Subačius
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Paper Abstract

Non-equilibrium carrier generation, transport, and recombination have been investigated in Fe-doped InP crystals experimentally in subnanosecond time domain by using time-resolved picosecond four-wave mixing technique. The carriers were generated by below band-gap excitation at 1064 nm (hv = 1.17 eV), what allowed photoexcitation of non-equilibrium carriers from/via Fe-related deep levels. The contributions of Fe2+/Fe3+ deep level states and of the excited state Fe2+* have been analyzed by numerical modeling, using the relevant model which took into account carrier generation via different defect states, as well recombination and diffusion. The modeling was helpful to get insight into varying with excitation generation rates of holes and electrons and explained the main features of FWM kinetics and exposure characteristics.

Paper Details

Date Published: 25 January 2007
PDF: 6 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960S (25 January 2007); doi: 10.1117/12.726452
Show Author Affiliations
Arūnas Kadys, Vilnius Univ. (Lithuania)
Ramūnas Aleksiejūnas, Vilnius Univ. (Lithuania)
Kęstutis Jarašiūnas, Vilnius Univ. (Lithuania)
Liudas Subačius, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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