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Proceedings Paper

Mapping of differently doped InP wafers by nanosecond and picosecond four-wave mixing techniques
Author(s): Saulius Nargelas; Ramūnas Aleksiejūnas; Arūnas Kadys; Vytautas Gudelis; Kęstutis Jarašiūnas
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Paper Abstract

Time-integrated and time-resolved FWM techniques were applied for characterization of the photoelectrical properties of undoped, S-doped, and Fe-doped InP wafers and for a mapping of their homogeneity. We performed measurements of spatial distribution of diffraction efficiency across the wafers by nanosecond FWM and investigated a physical origin of the observed variations by using time-resolved picosecond FWM. By analyzing the diffraction efficiency kinetics and its dependence on excitation energy, we evaluated the impurity-assisted carrier generation, recombination, diffusion processes, electrical activity of the defects, and their distribution across the wafers. Carrier lifetime variation from 2.5 ns to 7.5 ns across the undoped InP wafer was found, while the diffusion coefficient value of 8 ± 0.5 cm2/s was almost constant. In S-doped InP wafer, wafer inhomogeneity was attributed to carrier generation peculiarities governed by spatial distribution of deep centers.

Paper Details

Date Published: 25 January 2007
PDF: 6 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960R (25 January 2007); doi: 10.1117/12.726447
Show Author Affiliations
Saulius Nargelas, Vilnius Univ. (Lithuania)
Ramūnas Aleksiejūnas, Vilnius Univ. (Lithuania)
Arūnas Kadys, Vilnius Univ. (Lithuania)
Vytautas Gudelis, Vilnius Univ. (Lithuania)
Kęstutis Jarašiūnas, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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