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Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses
Author(s): Gang Zhao; Qiulong Hao; Wenznog Qi; Jianguo Chen; Jing Zhang
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Paper Abstract

For a dielectric exposure to the femtosecond hyperbolic secant pulse, the electron dominated by collisional and multiphoton ionization has been studied. Analytical description of the temporal evolution of the electron density induced by the optical pulse has been given. As the result, at the damage threshold an explicit expression of the pulse width in terms of the pulse fluence has been derived.

Paper Details

Date Published: 5 March 2007
PDF: 7 pages
Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65950J (5 March 2007); doi: 10.1117/12.726446
Show Author Affiliations
Gang Zhao, Sichuan Univ. (China)
Qiulong Hao, Sichuan Univ. (China)
Wenznog Qi, Sichuan Univ. (China)
Jianguo Chen, Sichuan Univ. (China)
Jing Zhang, Sichuan Univ. (China)

Published in SPIE Proceedings Vol. 6595:
Fundamental Problems of Optoelectronics and Microelectronics III
Yuri N. Kulchin; Jinping Ou; Oleg B. Vitrik; Zhi Zhou, Editor(s)

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