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Proceedings Paper

GaAs/AlGaAs structures with δ-doped layer for microwave detection
Author(s): Algirdas Sužiedėlis; Valerij Petkun; Antoni Kozič; Viktorija Kazlauskaitė; Aurimas Čerškus; Gytis Steikūnas; Jonas Gradauskas; Jurgis Kundrotas; Steponas Ašmontas; Irina Papsujeva; Aleksandras Narkūnas; Tomas Anbinderis; Vladimir Umansky; Hadas Shtrikmann
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Paper Abstract

Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation doped structure.

Paper Details

Date Published: 25 January 2007
PDF: 6 pages
Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960N (25 January 2007); doi: 10.1117/12.726409
Show Author Affiliations
Algirdas Sužiedėlis, Semiconductor Physics Institute (Lithuania)
Valerij Petkun, Semiconductor Physics Institute (Lithuania)
Antoni Kozič, Semiconductor Physics Institute (Lithuania)
Viktorija Kazlauskaitė, Semiconductor Physics Institute (Lithuania)
Aurimas Čerškus, Semiconductor Physics Institute (Lithuania)
Gytis Steikūnas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Jurgis Kundrotas, Semiconductor Physics Institute (Lithuania)
Steponas Ašmontas, Semiconductor Physics Institute (Lithuania)
Irina Papsujeva, ELMIKA Ltd. (Lithuania)
Aleksandras Narkūnas, ELMIKA Ltd. (Lithuania)
Tomas Anbinderis, ELMIKA Ltd. (Lithuania)
Vladimir Umansky, Weizmann Institute of Science (Israel)
Hadas Shtrikmann, Weizmann Institute of Science (Israel)


Published in SPIE Proceedings Vol. 6596:
Advanced Optical Materials, Technologies, and Devices

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