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Proceedings Paper

Finite element analysis of EUV lithography
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Paper Abstract

Extreme ultraviolet (EUV) lithography is seen as the main candidate for production of next generation computer technology. Due to the short wavelength of EUV light (≈ 13 nm) novel reflective masks have to be used in the production process. The high quality requirements for these EUV masks make it necessary to measure and characterize their pattern profile. Here we present numerical simulations of EUV masks with the finite element method (FEM) which allow the reconstruction of geometrical mask parameters like critical dimension (CD), sidewall angles, layer thicknesses from experimental scatterometry data.1 Special numerical techniques like domain decomposition algorithms and high order finite elements become very important to obtain accurate numerical results in small computational time. We analyze the sensitivity of scatterometry with respect to the geometrical line profile. We demonstrate the determination of line profiles from experimental scatterometry data and compare our values to direct microscopic measurements using CD-SEM and AFM.

Paper Details

Date Published: 18 June 2007
PDF: 12 pages
Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 661718 (18 June 2007); doi: 10.1117/12.726156
Show Author Affiliations
Jan Pomplun, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Sven Burger, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Frank Schmidt, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)


Published in SPIE Proceedings Vol. 6617:
Modeling Aspects in Optical Metrology
Harald Bosse; Bernd Bodermann; Richard M. Silver, Editor(s)

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