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Proceedings Paper

A mass-limited Sn target irradiated by dual laser pulses for an EUVL source
Author(s): Y. Tao; M. S. Tillack; K. L. Sequoia; F. Najimabadi
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Paper Abstract

We present efforts to mitigate debris from laser-produced Sn plasma by introducing a low energy pre-pulse while keeping high in-band conversion efficiency from laser to 13.5 nm extreme ultraviolet (EUV) light. The basic idea is to separate the processes of plasma production and 13.5 nm EUV light generation. A low energy pre-pulse is introduced to create a pre-plume; the main pulse then heats up the pre-plume to the optimum temperature for efficient 13.5 nm EUV light generation. Much lower ion energy and nearly the same conversion efficiency were simultaneously observed from plasma driven by a dual-pulse as compared with that of a single pulse. Thin Sn coating were investigated as a form of mass-limited target. It was found that the higher ion energy normally accompanying the use of a mass-limited Sn target is effectively maintained under 100 eV by using the dual pulse irradiation technique. A Sn coating as thin as 30 nm could generate almost the same conversion efficiency as that obtained with a single pulse and a massive target. It was noted that less gas is required to mitigate ions with lower energy when dual pulses are used. This research enables an efficient, clean, and high-speed mass-limited target supply based on pure Sn for a high volume manufacturing (HVM) EUVL source.

Paper Details

Date Published: 21 March 2007
PDF: 10 pages
Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173Q (21 March 2007); doi: 10.1117/12.725806
Show Author Affiliations
Y. Tao, Univ. of California, San Diego (United States)
M. S. Tillack, Univ. of California, San Diego (United States)
K. L. Sequoia, Univ. of California, San Diego (United States)
F. Najimabadi, Univ. of California, San Diego (United States)

Published in SPIE Proceedings Vol. 6517:
Emerging Lithographic Technologies XI
Michael J. Lercel, Editor(s)

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