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Proceedings Paper

Effect of In ions on photorefractive properties in Fe:In:LiNbO3 crystals
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Paper Abstract

Lithium niobate single crystal has been found to be a versatile material in the field of nonlinear devices due to its excellent electric-optical, dielectric and nonlinear optical properties. When LiNbO3 device serves as holographic storage media, it is often required a big dynamic range, a big sensitivity and a high photo-damage resistance ability. Although Fe-doped LiNb03 in holographic storage is one the most widely investigated crystals and takes on better comprehensive merits, its performance is severely limited by the low photo-damage resistance ability when LiNbO3 is operated on high laser intensity. Indium is one of the beneficial impurity ions for suppressing photo damage. In this paper, we grown a series of Fe:In:LiNb03 crystals with a varying content of In doping by Czochraski technique. On the basis of the ultraviolet-visible absorption spectra measurement and two-wave coupling experiment, the effect of In ions on photorefractive properties is explored and discussed systematically. It is found that the photorefractive properties can be greatly enhanced by In doping in Fe:LiNb03. Among the four samples of Fe:In:LiNbO3 crystals, the Fe:In(2 mol%):LiNbO3 crystal has the highest photorefractive sensitivity and the largest dynamic range (1.79 cmJ-1 and 2.10, respectively) and can resist higher intensity laser irradiation. Our analysis indicates that increased photoconductivity is mainly responsible for the excellent photorefractive comprehensive properties. It is believed by the experimental results that Fe:In(2 mol%):LiNbO3 crystal is a promising holographic storage medium.

Paper Details

Date Published: 5 March 2007
PDF: 6 pages
Proc. SPIE 6595, Fundamental Problems of Optoelectronics and Microelectronics III, 65950P (5 March 2007); doi: 10.1117/12.725706
Show Author Affiliations
Tao Zhang, Harbin Engineering Univ. (China)
Tao Geng, Harbin Engineering Univ. (China)
Wei-Min Sun, Harbin Engineering Univ. (China)


Published in SPIE Proceedings Vol. 6595:
Fundamental Problems of Optoelectronics and Microelectronics III
Yuri N. Kulchin; Jinping Ou; Oleg B. Vitrik; Zhi Zhou, Editor(s)

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