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Proceedings Paper

On the origin of 1/f noise in MOSFETs
Author(s): Lode K. J. Vandamme
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Paper Abstract

The 1/f noise in MOSFETs is stated to be an ensemble of many RTS with different time constants. The majority of literature on 1/f noise is overlooking the contribution due to mobility fluctuations that are uncorrelated with number fluctuations. Our demonstration that the so-called proofs for ΔN can also be obtained from the empirical relation is new. The following misunderstandings and controversial topics will be addressed: 1) 1/f and RTS noise can have different physical origins. An analysis in time domain shows that the low-frequency noise with RTS is nothing else than a superposition of a pure two level noise with a Lorentzian spectrum and a noise with a Gaussian amplitude probability density with a pure 1/f spectrum with different bias dependency and physical origins. 2) It is very unlikely that in a spectrum consisting of one strong two level RTS and a pure 1/f noise, the 1/f noise is a superposition of many RTS with different time constants. 3) The spreading in WLSI /I2 below a critical WL is not a proof for the ΔN origin. 4) The typical shape in the double log plot of SI /I2 versus I, from sub threshold to strong inversion is also not a proof for the ΔN origin.

Paper Details

Date Published: 8 June 2007
PDF: 15 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000F (8 June 2007); doi: 10.1117/12.725665
Show Author Affiliations
Lode K. J. Vandamme, Eindhoven Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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