Share Email Print
cover

Proceedings Paper

Challenges in HF noise characterization and modeling of sub-100nm MOSFETs for RF ICs
Author(s): Chih-Hung Chen; Zheng Zeng; Jin-Shyong Jan; Keh-Chung Wang; Chune-Sin Yeh
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper presents the challenges in the high-frequency noise characterization and modeling of sub-100nm MOSFETs for radio-frequency (RF) integrated circuits (IC). In general, it addresses three major issues - accuracy of high-frequency (HF) noise measurements, impact of test structure designs and physics-based noise models for the noise sources of interest - channel noise, induced gate noise and gate tunneling noise. In the first section, different HF measurement techniques, namely Y-factor method and power-equation method are reviewed. The impact due to the difference in the output impedances of a noise source in the hot and the cold states on the measurement accuracy is demonstrated. In the second section, different test structures and de-embedding procedures for noise and scattering parameter de-embedding to get rid of the parasitic effects from the probe pads and interconnections in a device-under-test (DUT) are reviewed. Special considerations on the measurement accuracy are paid to the shift of DC bias conditions. Finally, with the power spectral densities for the noise sources of interest obtained from the intrinsic noise parameters, different physics-based noise models for these noise sources in sub-100nm MOSFETs are discussed. The impact of the channel-length modulation (CLM) effect, the hot electron effect and the velocity saturation effect on the channel thermal noise and the impact of the gate tunneling noise on the noise performance of deep submicron MOSFETs are reviewed.

Paper Details

Date Published: 11 June 2007
PDF: 15 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001P (11 June 2007); doi: 10.1117/12.725641
Show Author Affiliations
Chih-Hung Chen, McMaster Univ. (Canada)
Zheng Zeng, United Microelectronics Corp. Group (United States)
Jin-Shyong Jan, United Microelectronics Corp. Group (United States)
Keh-Chung Wang, United Microelectronics Corp. Group (United States)
Chune-Sin Yeh, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

© SPIE. Terms of Use
Back to Top