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Proceedings Paper

High power pure-blue semiconductor lasers
Author(s): Osamu Goto; Shigetaka Tomiya; Yukio Hoshina; Takayuki Tanaka; Makoto Ohta; Yoshitsugu Ohizumi; Yoshifumi Yabuki; Kenji Funato; Masao Ikeda
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Paper Abstract

We developed high-power and long-lived AlGaInN-based pure-blue semiconductor lasers emitting in the 440-450 nm wavelength range. The half lifetime (the time for the output power to degrade to half its initial value in constant current mode) was estimated to be more than 10000 hours at a power of 0.75 W under continuous-wave operation at 35°C. Reducing the density of structural defects newly originating from the multiple quantum well active layer and reducing the operating current density were shown to be important for producing high-performance pure-blue lasers.

Paper Details

Date Published: 8 February 2007
PDF: 8 pages
Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850Z (8 February 2007); doi: 10.1117/12.725162
Show Author Affiliations
Osamu Goto, Sony Shiroishi Semiconductor, Inc. (Japan)
Shigetaka Tomiya, Sony Corp. (Japan)
Yukio Hoshina, Sony Shiroishi Semiconductor, Inc. (Japan)
Takayuki Tanaka, Sony Shiroishi Semiconductor, Inc. (Japan)
Makoto Ohta, Sony Shiroishi Semiconductor, Inc. (Japan)
Yoshitsugu Ohizumi, Sony Shiroishi Semiconductor, Inc. (Japan)
Yoshifumi Yabuki, Sony Shiroishi Semiconductor, Inc. (Japan)
Kenji Funato, Sony Corp. (Japan)
Masao Ikeda, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 6485:
Novel In-Plane Semiconductor Lasers VI
Carmen Mermelstein; David P. Bour, Editor(s)

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