Share Email Print

Proceedings Paper

Silicon carbide white light LEDs for solid-state lighting
Author(s): Sachin Bet; Nathaniel Quick; Aravinda Kar
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

White light emitting diodes (LEDs) have been successfully fabricated for the first time in silicon carbide substrates (4H-SiC) using a novel laser doping technique. The donor-acceptor pair (DAP) recombination mechanism for luminescence has been used to tailor these LEDs. Chromium (Cr), which produces multiple acceptor sites per atom, and selenium which produces multiple donor sites per atom were successfully incorporated into SiC for the first time using laser doping. Aluminum (Al) and nitrogen (N) were also laser-doped into SiC. Green (521-575 nm) and blue (460-498 nm) wavelengths were observed due to radiative recombination transitions between donor-acceptors pairs of N-Cr and N-Al respectively, while a prominent violet (408 nm) wavelength was observed due to transitions from the nitrogen level to the valence band level. The red (698-738 nm) luminescence was mainly due to nitrogen excitons and other defect levels. This RGB combination produced a broadband white light spectrum extending from 380 to 900 nm. The color space tri-stimulus values were X = 0.3322, Y = 0.3320 and Z = 0.3358 as per 1931 CIE (International Commission on Illumination) for 4H-SiC corresponding to a color rendering index of 96.56; the color temperature of 5510 K is very close to average daylight (5500 K).

Paper Details

Date Published: 13 February 2007
PDF: 8 pages
Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648613 (13 February 2007); doi: 10.1117/12.724918
Show Author Affiliations
Sachin Bet, College of Optics and Photonics, Univ. of Central Florida (United States)
Nathaniel Quick, Applicote Associates (United States)
Aravinda Kar, College of Optics and Photonics, Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 6486:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI
Klaus P. Streubel; Heonsu Jeon, Editor(s)

© SPIE. Terms of Use
Back to Top