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Proceedings Paper

1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI
Author(s): Marco Bellini; Peng Cheng; Aravind Appaswamy; John D. Cressler; Jin Cai
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Paper Abstract

We report, for the first time, the low frequency noise characteristics of both fully- and partially-depleted SiGe HBTs-on- SOI, both in forward and inverse modes of operation. These SiGe HBTs on thin-film SOI are then compared with bulk SiGe HBTs in order to evaluate how the fundamentally different device structure affects 1/f noise performance. In addition, the impact of substrate voltage, collector doping, and temperature on low-frequency noise is investigated.

Paper Details

Date Published: 8 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000H (8 June 2007); doi: 10.1117/12.724678
Show Author Affiliations
Marco Bellini, Georgia Tech (United States)
Peng Cheng, Georgia Tech (United States)
Aravind Appaswamy, Georgia Tech (United States)
John D. Cressler, Georgia Tech (United States)
Jin Cai, IBM Thomas Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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