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Proceedings Paper

A semiconductor device noise model: integration of Poisson type stochastic Ohmic contact conditions with semiclassical transport
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Paper Abstract

In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.

Paper Details

Date Published: 8 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000E (8 June 2007); doi: 10.1117/12.724661
Show Author Affiliations
B. A. Noaman, The George Washington Univ. (United States)
C. E. Korman, The George Washington Univ. (United States)
A. J. Piazza, Applied Wave Research, Inc. (United States)

Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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