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Proceedings Paper

Low-temperature resistance noise in lightly doped La2-x Srx CuO4
Author(s): I. Raičević; J. Jaroszyński; Dragana Popović; G. Jelbert; C. Panagopoulos; T. Sasagawa
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Paper Abstract

Studies of low-frequency noise in the c-axis resistance of lightly doped La2-x SrxCuO4 (x = 0.03) have revealed distinct switching fluctuations at low temperatures and in magnetic fields B of up to 9 T parallel to the c-axis of the crystal. The switching noise is modulated by some slower events and becomes less prominent with increasing temperature T. Our results demonstrate the existence of multiple metastable states in the presence of B. The overall behavior of the noise is consistent with the picture of microscopic segregation of doped holes into hole-rich regions separated by undoped domains in CuO2 planes. It also strongly suggests that interactions should be included in possible theoretical models to describe the data.

Paper Details

Date Published: 11 June 2007
PDF: 6 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 660020 (11 June 2007); doi: 10.1117/12.724649
Show Author Affiliations
I. Raičević, Florida State Univ. (United States)
J. Jaroszyński, Florida State Univ. (United States)
Dragana Popović, Florida State Univ. (United States)
G. Jelbert, Univ. of Cambridge (United Kingdom)
C. Panagopoulos, Univ. of Cambridge (United Kingdom)
T. Sasagawa, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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