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Proceedings Paper

On the mechanisms of low-frequency noise in vertical silicon pnp BJTs
Author(s): Peng Cheng; Enhai Zhao; John D. Cressler; Jayasimha Prasad
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Paper Abstract

We present an investigation of low-frequency noise in advanced vertical pnp bipolar junction transistors (BJTs) with differing interfacial oxide thicknesses (10Å, 12Å, and 14Å). Low-frequency noise is observed to exhibit a cubic dependence on IFO thickness. Devices were measured across the temperature range of 90 K to 450 K. From 90 K to 250 K, the magnitude of the low-frequency noise is found to decrease with temperature, but from 250 K to 450 K the noise actually increases with temperature. Devices were hot-carrier (electrically) stressed, and the low-frequency noise was found to be almost unchanged with the addition of stress-induced traps. The transparency fluctuation model is suggested as a possible explanation for the operative noise mechanism, due to the similar dependence of base current and low-frequency noise on interfacial oxide thickness.

Paper Details

Date Published: 8 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000C (8 June 2007); doi: 10.1117/12.724648
Show Author Affiliations
Peng Cheng, Georgia Institute of Technology (United States)
Enhai Zhao, Georgia Institute of Technology (United States)
John D. Cressler, Georgia Institute of Technology (United States)
Jayasimha Prasad, Maxim Semiconductor (United States)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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