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Proceedings Paper

Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors
Author(s): Mindaugas Ramonas; Christoph Jungemann; Paulius Sakalas; Michael Schröter; Wolfgang Kraus
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Paper Abstract

Terminal current noise calculations are performed for a SiGe heterojunction bipolar transistor in a wide range of collector-emitter bias conditions. The generalized hydrodynamic (HD) model with a local temperature approach for avalanche generation is used. The parameters of the local temperature model are calibrated by matching the avalanche multiplication factor to results obtained by full-band Monte Carlo simulations. The noise figure calculation results are compared with experimental values and overall good agreement is obtained. The hydrodynamic and a drift-diffusion (DD) model are used to investigate terminal current noise due to impact-ionization. The behavior of the current noise spectral intensity is found to be different for the two models. The Fano factor of the collector current fluctuations is well described by the avalanche multiplication factor in the case of the DD model, whereas the HD model evidences no correlation between the Fano factor and the avalanche multiplication factor. The collector terminal electron transfer functions are used to discuss the difference.

Paper Details

Date Published: 11 June 2007
PDF: 12 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001F (11 June 2007); doi: 10.1117/12.724631
Show Author Affiliations
Mindaugas Ramonas, Bundeswehr Univ. (Germany)
Semiconductor Physics Institute (Lithuania)
Christoph Jungemann, Bundeswehr Univ. (Germany)
Paulius Sakalas, Dresden Univ. of Technology (Germany)
Semiconductor Physics Institute (Lithuania)
Michael Schröter, Dresden Univ. of Technology (Germany)
Univ. of California, San Diego (United States)
Wolfgang Kraus, Atmel Germany GmbH (Germany)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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