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Proceedings Paper

Noise characteristic and quality investigation of ultrafast avalanche photodiodes
Author(s): S. Pralgauskaitė; V. Palenskis; J. Matukas; A. Vizbaras
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Paper Abstract

A detailed study of photosensitivity and noise characteristics of ultrafast InGaAsP/InP avalanche photodiodes with separate absorption, grading, charge and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated. Noise origin in investigated APDs is 1/f, generation-recombination and shot noises. Different quality samples have been investigated and it is shown that noise characteristics well reflect APD quality problems. It is shown that low-frequency noise and excess shot noise characteristics are very sensitive to the APD quality problems and clear up physical processes in device structure. Noise characteristic analyses can be used for the APD quality problems revealing and optimal design development.

Paper Details

Date Published: 8 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000L (8 June 2007); doi: 10.1117/12.724626
Show Author Affiliations
S. Pralgauskaitė, Vilnius Univ. (Lithuania)
V. Palenskis, Vilnius Univ. (Lithuania)
J. Matukas, Vilnius Univ. (Lithuania)
A. Vizbaras, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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