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Proceedings Paper

Noises of p-i-n UV photodetectors
Author(s): Ferdinand V. Gasparyan; Can E. Korman; Slavik V. Melkonyan
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Paper Abstract

Investigations of the static characteristics, responsivity, internal noises, and detectivity of the forward biased p-i-n photodetectors made on wide bandgap compensated semiconductors operating in double injection regime are presented. Noise related calculations are performed by utilizing "Impedance Field Method". Numerical simulations are made assessing 4H-SiC and GaN biased p-i-n photodiodes noise related characteristics. It is shown that forward biased p-i-n photodiodes have low level of thermal and generation-recombination noises and high values of sensitivity and detectivity at the room temperature.

Paper Details

Date Published: 11 June 2007
PDF: 9 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001L (11 June 2007); doi: 10.1117/12.724623
Show Author Affiliations
Ferdinand V. Gasparyan, Yerevan State Univ. (Armenia)
Can E. Korman, George Washington Univ. (United States)
Slavik V. Melkonyan, Yerevan State Univ. (Armenia)

Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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