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Proceedings Paper

Main sources of electron mobility fluctuations in semiconductors
Author(s): Slavik V. Melkonyan; Ferdinand V. Gasparyan; Haik V. Asriyan
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Paper Abstract

The main mechanisms of the conduction electrons mobility fluctuations, originating in n-type semiconductors with electron traps are investigated. It is shown that the current carriers mobility fluctuations are determined by the energy fluctuations. Fundamental sources of electron mobility fluctuations are established. The first source is established to be related with a non-elasticity of electron random scattering processes: intraband scatterings and electronic transitions "trap-conduction band". The second source of mobility fluctuations is established to be related with random character of the transitions of conductance electrons trough the potential barriers of p-n junctions or/and ohmic contacts.

Paper Details

Date Published: 11 June 2007
PDF: 8 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001K (11 June 2007); doi: 10.1117/12.724567
Show Author Affiliations
Slavik V. Melkonyan, Yerevan State Univ. (Armenia)
Ferdinand V. Gasparyan, Yerevan State Univ. (Armenia)
Haik V. Asriyan, Yerevan State Univ. (Armenia)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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