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Proceedings Paper

Assessing the 1/f noise contributions of accidental defects in advanced semiconductor devices
Author(s): Gijs Bosman; Derek O. Martin; Shahed Reza
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Paper Abstract

The effects on the overall device noise of a small number of defects in device sections with a strong transfer impedance coupling to the device terminals is discussed using advanced bulk and silicon-on-insulator n channel MOSFETs and silicon nanowires as examples. From the measured noise and current-voltage data, the precise physical location of the noise centers is determined. Potential noise reduction methods are discussed.

Paper Details

Date Published: 8 June 2007
PDF: 8 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000A (8 June 2007); doi: 10.1117/12.724471
Show Author Affiliations
Gijs Bosman, Univ. of Florida (United States)
Derek O. Martin, Univ. of Florida (United States)
Shahed Reza, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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