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Proceedings Paper

Continuous-wave operation of photonic band-edge laser at 1.55 µm on silicon wafer
Author(s): G. Vecchi; F. Raineri; I. Sagnes; A. M. Yacomotti; P. Monnier; R. Braive; S. Bouchoule; A. Levenson; R. Raj
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Paper Abstract

We present continuous-wave laser operation at room temperature at 1.55 μm by optically pumping a photonic crystal structure containing an InGaAs/InP quantum well active layer. The active layer is integrated onto a Silicon chip by means of Au/In bonding technology. This metallic layer provides the reduction of heating by thermal dissipation into the substrate, and increases the quality-factor by reducing the radiative losses.

Paper Details

Date Published: 12 June 2007
PDF: 9 pages
Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659322 (12 June 2007); doi: 10.1117/12.724170
Show Author Affiliations
G. Vecchi, Lab. de Photonique et de Nanostructures, CNRS (France)
F. Raineri, Lab. de Photonique et de Nanostructures, CNRS (France)
I. Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
A. M. Yacomotti, Lab. de Photonique et de Nanostructures, CNRS (France)
P. Monnier, Lab. de Photonique et de Nanostructures, CNRS (France)
R. Braive, Lab. de Photonique et de Nanostructures, CNRS (France)
S. Bouchoule, Lab. de Photonique et de Nanostructures, CNRS (France)
A. Levenson, Lab. de Photonique et de Nanostructures, CNRS (France)
R. Raj, Lab. de Photonique et de Nanostructures, CNRS (France)


Published in SPIE Proceedings Vol. 6593:
Photonic Materials, Devices, and Applications II
Ali Serpengüzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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