Share Email Print
cover

Proceedings Paper

320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-µm cutoff wavelength
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In the past few years, significant progress has been made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photodetectors. Type-II superlattice demonstrated its ability to perform imaging in the middle and long infra-red range, becoming a potential competitor for technologies such as QWIP and HgCdTe. Using an empirical tight-binding model, we developed a superlattice design that matches the lattice parameter of GaSb substrates and presents a cutoff wavelength of 12 &mgr;m. Electrical and optical measurements performed on single element detectors at 77 K showed an R0A averaging 13 &OHgr;.cm2 and a quantum efficiency as high as 54%. We demonstrated high quality material growth with x-ray FWHM below 30 arcsec and an AFM rms roughness of 1.5 Å over an area of 20x20 &mgr;m2. A 320x256 array of 25x25&mgr;m2 pixels, hybridized to an Indigo Read Out Integrated Circuit, performed thermal imaging up to 185 K with an operability close to 97%. The noise equivalent temperature difference at 81 K presented a peak at 270 mK, corresponding to a mean value of 340 mK.

Paper Details

Date Published: 14 May 2007
PDF: 10 pages
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654204 (14 May 2007); doi: 10.1117/12.723832
Show Author Affiliations
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Binh Minh Nguyen, Northwestern Univ. (United States)
Darin Hoffman, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 6542:
Infrared Technology and Applications XXXIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top