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Proceedings Paper

Generation-recombination noise in forward-biased 4H-SiC p-n diode
Author(s): Sergey L. Rumyantsev; Alexander Dmitriev; Michael Levinshtein; Dmitri Veksler; Michael S. Shur; John Palmour; Mrinal Das; Brett Hull
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Paper Abstract

The current and frequency dependencies of the low frequency noise have been investigated in 4H-SiC p+-n junctions in the frequency range 100-104 Hz and at current densities from 10-4 to 101 A/cm2. Good quality of the p+-n diode under investigation has been ascertained by high value of the recombination time in the space charge region, &tgr;R ≈ 70 ns, extracted from current voltage characteristic. At small current densities j ⩽ 10-3 A/cm2, the spectral noise density SI ∝1/f3/2. At 10-3 A/cm2 < j < 10-2 A/cm2, the generation-recombination (GR) noise predominates. The amplitude of this GR noise non-monotonically depends on current. At j ⩾ 10-2 A/cm2, the 1/f (flicker noise) is dominant. A new model of GR noise of the recombination current in forward biased p-n junction has been proposed. The model assumes that a trap level located relatively close to the conduction band is responsible for the observed GR noise. The main contribution to the GR noise comes from the fluctuations of the charge state of the trap. The model describes well both current and frequency dependencies of the observed GR noise.

Paper Details

Date Published: 22 June 2007
PDF: 10 pages
Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001J (22 June 2007); doi: 10.1117/12.723444
Show Author Affiliations
Sergey L. Rumyantsev, Rensselaer Polytechnic Institute (United States)
Ioffe Institute (Russia)
Alexander Dmitriev, Ioffe Institute (Russia)
Michael Levinshtein, Ioffe Institute (Russia)
Dmitri Veksler, Rensselaer Polytechnic Institute (United States)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)
John Palmour, Cree, Inc. (United States)
Mrinal Das, Cree, Inc. (United States)
Brett Hull, Cree, Inc. (United States)


Published in SPIE Proceedings Vol. 6600:
Noise and Fluctuations in Circuits, Devices, and Materials
Massimo Macucci; Lode K.J. Vandamme; Carmine Ciofi; Michael B. Weissman, Editor(s)

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