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Proceedings Paper

Pronounced Auger suppression in long wavelength HgCdTe devices grown by molecular beam epitaxy
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Paper Abstract

Intrinsic carriers play a dominant role especially in the long wavelength (8-12 μm cut-off) HgCdTe material near ambient temperatures due to high thermal generation of carriers. This results in low minority carrier lifetimes caused by Auger recombination processes. Consequently, this low lifetime at high temperatures results in high dark currents and subsequently high noise. Cooling is one means of reducing this type of detector noise. However, the challenge is to design photon detectors to achieve background limited performance (BLIP) at the highest possible operating temperature; with the greatest desire being close to ambient temperature operation. We have demonstrated a unique planar device architecture using a novel approach in obtaining low arsenic doping concentrations in HgCdTe. Results indicate Auger suppression in P+/π/N+ devices at 300K and have obtained saturation current densities of the order of 3 milli Amps-cm2 on these devices.

Paper Details

Date Published: 14 May 2007
PDF: 8 pages
Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420G (14 May 2007); doi: 10.1117/12.723162
Show Author Affiliations
Priyalal S. Wijewarnasuriya, Army Research Lab. (United States)
Gregory Brill, Army Research Lab. (United States)
Yuanping Chen, Army Research Lab. (United States)
Nibir K. Dhar, Army Research Lab. (United States)
Chris Grein, EPIR Technologies, Inc. (United States)
Silviu Velicu, EPIR Technologies, Inc. (United States)
P. Y. Emelie, EPIR Technologies, Inc. (United States)
HyeSon Jung, EPIR Technologies, Inc. (United States)
Sivalingam Sivanathan, EPIR Technologies, Inc. (United States)
Arvind D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
Maryn G. Stapelbroek, DRS Sensors & Targeting Systems, Inc. (United States)
John Reekstin, DRS Sensors & Targeting Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 6542:
Infrared Technology and Applications XXXIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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