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Proceedings Paper

AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
Author(s): J. John; P. Malinowski; P. Aparicio; G. Hellings; A. Lorenz; M. Germain; F. Semond; J.-Y. Duboz; A. BenMoussa; J.-F. Hochedez; U. Kroth; M. Richter
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Paper Abstract

Metal-Semiconductor-Metal photodiodes were fabricated on epitaxially grown AlxGa1-xN on Si(111). The Aluminium content of the layers grown by means of molecular beam epitaxy (MBE) was 50, 80 and 100%, respectively. The processing was performed by standard microelectronic fabrication techniques like photolithography, wet and dry etching (RIE) and physical and chemical vapor deposition (PVD,CVD). The devices were characterized under illumination in a wavelength range from 400 to 185nm to determine the cut-off wavelength defined by the band-gap energy. Typical figures of merit like spectral responsivity R quantum efficiency &eegr; and specific detectivity D* have been extracted from the measurement data.

Paper Details

Date Published: 16 May 2007
PDF: 8 pages
Proc. SPIE 6585, Optical Sensing Technology and Applications, 658505 (16 May 2007); doi: 10.1117/12.723023
Show Author Affiliations
J. John, IMEC (Belgium)
P. Malinowski, Catholic Univ. of Leuven (Belgium)
P. Aparicio, Catholic Univ. of Leuven (Belgium)
G. Hellings, Catholic Univ. of Leuven (Belgium)
A. Lorenz, Catholic Univ. of Leuven (Belgium)
M. Germain, IMEC (Belgium)
F. Semond, CRHEA, CEA (France)
J.-Y. Duboz, CRHEA, CEA (France)
A. BenMoussa, Royal Observatory of Belgium (Belgium)
J.-F. Hochedez, Royal Observatory of Belgium (Belgium)
U. Kroth, Physikalisch-Technische Bundesanstalt (Germany)
M. Richter, Physikalisch-Technische Bundesanstalt (Germany)


Published in SPIE Proceedings Vol. 6585:
Optical Sensing Technology and Applications
Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Editor(s)

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